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January 2001
NDS8425
Single N-Channel, 2.5V Specified PowerTrench ? MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
?
7.4 A, 20 V.
R DS(ON) = 0.022 ? @ V GS = 4.5 V
R DS(ON) = 0.028 ? @ V GS = 2.7 V
minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Applications
?
?
?
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low
R DS(ON)
?
?
DC/DC converter
Load switch
?
High power and current handling capability in a widely
used surface mount package
D
D
D
D
5
6
4
3
SO-8
S
S
S
G
7
8
2
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
± 7.4
A
– Pulsed
± 20
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
NDS8425
Device
NDS8425
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor International
NDS8425 Rev D (W)
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相关代理商/技术参数
NDS8425 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8426 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel Enhancement Mode Field Effect Transistor
NDS8426A 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8426A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8433 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434_Q 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube